Strategic Research Initiatives

​​​​​The Dean’s Office has launched four strategic research initiatives of the Maroun Semaan Endowment in July 2018. All MSFEA faculty members who have a full-time non-visiting professorial rank are eligible to apply.​ More information about each initiative is available below.

  • Protected Time initiative: provides MSFEA faculty members with more dedicated time for research through course buy-outs. Applications are open starting Decmeber 20, 2018.​

Submission Form​

  • Equipment Grant initiative: supports​ the purchase of major research-dedicated scientific equipment.


Submission Form​

  • Visiting Scholars initiative: consists of hosting in MSFEA visiting scholars with whom MSFEA faculty may work to develop international collaborations which can open up funding opportunities in the home countries of foreign institutions.

Submission Form

  • Writing Service initiative:​ supports​ faculty members in technical editing of their extramural grant proposals.

Email your proposal to the Dean’s Office​​

Protected time awardees for spring 2018-2019

  • Jason Amatoury
  • Daniel Asmar
  • Mariette Awad
  • Joseph Costantine (Maroun Semaan Scholar)
  • Naseem Daher
  • Rana Haddad
  • Massoud Khraiche
  • Issam Srour
  • Fadi Zaraket

Equipment grants awards for AY 2018-2019

  • A dynamic mechanical analysis instrument which can be used to characterize the behavior of a wide range of materials (Samir Mustapha and other colleagues) 
  • An optical profiler which enables non-contact surface measurements of micro- and nano-scale surface features (Massoud Khraiche and other colleagues)​


  • The next call for protected time in fall 2019-2020 will be made on December 20, 2018 with applications due on January 31, 2019. 
  • For equipment grants, the next call for equipment grants for AY 2019-2020 will be made on June 30, 2019 with applications due on August 31, 2019. 
  • For visiting scholars and writing service, there is no deadline. Applications are received and evaluated on a rolling basis.